JPS4959576A - - Google Patents

Info

Publication number
JPS4959576A
JPS4959576A JP7322073A JP7322073A JPS4959576A JP S4959576 A JPS4959576 A JP S4959576A JP 7322073 A JP7322073 A JP 7322073A JP 7322073 A JP7322073 A JP 7322073A JP S4959576 A JPS4959576 A JP S4959576A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7322073A
Other languages
Japanese (ja)
Other versions
JPS5142470B2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4959576A publication Critical patent/JPS4959576A/ja
Publication of JPS5142470B2 publication Critical patent/JPS5142470B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
  • Radiography Using Non-Light Waves (AREA)
  • X-Ray Techniques (AREA)
JP7322073A 1972-06-29 1973-06-28 Expired JPS5142470B2 (en])

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26766772A 1972-06-29 1972-06-29

Publications (2)

Publication Number Publication Date
JPS4959576A true JPS4959576A (en]) 1974-06-10
JPS5142470B2 JPS5142470B2 (en]) 1976-11-16

Family

ID=23019704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7322073A Expired JPS5142470B2 (en]) 1972-06-29 1973-06-28

Country Status (3)

Country Link
US (1) US3742229A (en])
JP (1) JPS5142470B2 (en])
FR (1) FR2191764A5 (en])

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192178A (en]) * 1975-02-10 1976-08-12
JPS51120180A (en) * 1975-04-15 1976-10-21 Nippon Telegr & Teleph Corp <Ntt> Pattern printing device
JPS52112280A (en) * 1976-03-17 1977-09-20 Mitsubishi Electric Corp X-ray exposure mask
JPS52136577A (en) * 1976-05-11 1977-11-15 Nippon Chemical Ind Aligning device
JPS5342678A (en) * 1976-09-30 1978-04-18 Nippon Telegr & Teleph Corp <Ntt> X-ray exposure method
JPS55113330A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai X-ray exposure system and device

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3874916A (en) * 1972-06-23 1975-04-01 Radiant Energy Systems Mask alignment system for electron beam pattern generator
GB1473301A (en) * 1973-05-03 1977-05-11 Nippon Kogaku Kk Manufacture of multi-layer structures
US4050817A (en) * 1973-05-03 1977-09-27 Nippon Kogaku K.K. Manufacture of multi-layer structures
JPS5253462Y2 (en]) * 1974-03-18 1977-12-05
US3947687A (en) * 1974-10-23 1976-03-30 The United States Of America As Represented By The Secretary Of The Air Force Collimated x-ray source for x-ray lithographic system
US3984244A (en) * 1974-11-27 1976-10-05 E. I. Du Pont De Nemours And Company Process for laminating a channeled photosensitive layer on an irregular surface
US3984680A (en) * 1975-10-14 1976-10-05 Massachusetts Institute Of Technology Soft X-ray mask alignment system
DE2604939C3 (de) * 1976-02-09 1978-07-27 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen von wenigstens einem Durchgangsloch insbesondere einer Düse für Tintenstrahldrucker
US4085329A (en) * 1976-05-03 1978-04-18 Hughes Aircraft Company Hard X-ray and fluorescent X-ray detection of alignment marks for precision mask alignment
DE2635275C2 (de) * 1976-08-05 1984-09-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Justierung eines scheibenförmigen Substrates relativ zu einer Fotomaske in einem Röntgenstrahlbelichtungsgerät
US4131472A (en) * 1976-09-15 1978-12-26 Align-Rite Corporation Method for increasing the yield of batch processed microcircuit semiconductor devices
JPS5350680A (en) * 1976-10-19 1978-05-09 Nec Corp Transfer mask for x-ray exposure and its production
US4134066A (en) * 1977-03-24 1979-01-09 International Business Machines Corporation Wafer indexing system using a grid pattern and coding and orientation marks in each grid cell
US4200395A (en) * 1977-05-03 1980-04-29 Massachusetts Institute Of Technology Alignment of diffraction gratings
DE2722958A1 (de) * 1977-05-20 1978-11-23 Siemens Ag Verfahren zur justierung einer halbleiterscheibe relativ zu einer bestrahlungsmaske bei der roentgenstrahl-fotolithografie
DE2723902C2 (de) * 1977-05-26 1983-12-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Parallelausrichtung und Justierung der Lage einer Halbleiterscheibe relativ zu einer Bestrahlungsmaske bei der Röntgenstrahl-Fotolithografie
US4215192A (en) * 1978-01-16 1980-07-29 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4342917A (en) * 1978-01-16 1982-08-03 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4184078A (en) * 1978-08-15 1980-01-15 The United States Of America As Represented By The Secretary Of The Navy Pulsed X-ray lithography
USRE33992E (en) * 1978-08-15 1992-07-14 The United States Of America As Represented By The Secretary Of The Navy Pulsed X-ray lithography
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
DE2841124C2 (de) * 1978-09-21 1984-09-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von elektronischen Halbleiterbauelementen durch Röntgen-Lithographie
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
US4301237A (en) * 1979-07-12 1981-11-17 Western Electric Co., Inc. Method for exposing substrates to X-rays
US4246054A (en) * 1979-11-13 1981-01-20 The Perkin-Elmer Corporation Polymer membranes for X-ray masks
GB2066487B (en) * 1979-12-18 1983-11-23 Philips Electronic Associated Alignment of exposure masks
US4335313A (en) * 1980-05-12 1982-06-15 The Perkin-Elmer Corporation Method and apparatus for aligning an opaque mask with an integrated circuit wafer
DE3118802A1 (de) * 1980-05-14 1982-02-25 Canon K.K., Tokyo Druckuebertragungsgeraet
US4357540A (en) * 1980-12-19 1982-11-02 International Business Machines Corporation Semiconductor device array mask inspection method and apparatus
US4343878A (en) * 1981-01-02 1982-08-10 Amdahl Corporation System for providing photomask alignment keys in semiconductor integrated circuit processing
US4477921A (en) * 1981-11-27 1984-10-16 Spire Corporation X-Ray lithography source tube
JPS5968928A (ja) * 1982-10-13 1984-04-19 Pioneer Electronic Corp 半導体装置の製造方法
US4576832A (en) * 1982-12-30 1986-03-18 International Business Machines Corporation Self-aligning mask
US4760265A (en) * 1986-01-18 1988-07-26 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Method and device for detecting defects of patterns in microelectronic devices
JPH0746681B2 (ja) * 1986-10-28 1995-05-17 富士通株式会社 Ｘ線ステッパー用マスクの製造方法
US4926452A (en) * 1987-10-30 1990-05-15 Four Pi Systems Corporation Automated laminography system for inspection of electronics
US5561696A (en) * 1987-10-30 1996-10-01 Hewlett-Packard Company Method and apparatus for inspecting electrical connections
US5621811A (en) * 1987-10-30 1997-04-15 Hewlett-Packard Co. Learning method and apparatus for detecting and controlling solder defects
US5097492A (en) * 1987-10-30 1992-03-17 Four Pi Systems Corporation Automated laminography system for inspection of electronics
US5081656A (en) * 1987-10-30 1992-01-14 Four Pi Systems Corporation Automated laminography system for inspection of electronics
US5262257A (en) * 1989-07-13 1993-11-16 Canon Kabushiki Kaisha Mask for lithography
JPH03248414A (ja) * 1990-02-26 1991-11-06 Mitsubishi Electric Corp 選択的な表面反応を利用した微細パターンの形成方法
US5259012A (en) * 1990-08-30 1993-11-02 Four Pi Systems Corporation Laminography system and method with electromagnetically directed multipath radiation source
US5124561A (en) * 1991-04-04 1992-06-23 International Business Machines Corporation Process for X-ray mask warpage reduction
US5382483A (en) * 1992-01-13 1995-01-17 International Business Machines Corporation Self-aligned phase-shifting mask
JPH0815854A (ja) * 1994-06-30 1996-01-19 Fujitsu Ltd 半導体装置の製造方法
US5583904A (en) * 1995-04-11 1996-12-10 Hewlett-Packard Co. Continuous linear scan laminography system and method
US5687209A (en) * 1995-04-11 1997-11-11 Hewlett-Packard Co. Automatic warp compensation for laminographic circuit board inspection
US5570405A (en) * 1995-06-06 1996-10-29 International Business Machines Corporation Registration and alignment technique for X-ray mask fabrication
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US20040137734A1 (en) * 1995-11-15 2004-07-15 Princeton University Compositions and processes for nanoimprinting
US7758794B2 (en) * 2001-10-29 2010-07-20 Princeton University Method of making an article comprising nanoscale patterns with reduced edge roughness
US7141450B2 (en) * 2002-04-08 2006-11-28 Lucent Technologies Inc. Flip-chip alignment method
JP2006259143A (ja) * 2005-03-16 2006-09-28 Fuji Xerox Co Ltd 配置装置及び方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3113896A (en) * 1961-01-31 1963-12-10 Space Technology Lab Inc Electron beam masking for etching electrical circuits
US3447924A (en) * 1965-08-16 1969-06-03 Charles J Trzyna Aligning method
US3521058A (en) * 1965-09-08 1970-07-21 Georg S Mittelstaedt Method of improving the definition of detail of both hard and soft substance in radiographs
US3637380A (en) * 1967-06-26 1972-01-25 Teeg Research Inc Methods for electrochemically making metallic patterns by means of radiation-sensitive elements

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192178A (en]) * 1975-02-10 1976-08-12
JPS51120180A (en) * 1975-04-15 1976-10-21 Nippon Telegr & Teleph Corp <Ntt> Pattern printing device
JPS52112280A (en) * 1976-03-17 1977-09-20 Mitsubishi Electric Corp X-ray exposure mask
JPS52136577A (en) * 1976-05-11 1977-11-15 Nippon Chemical Ind Aligning device
JPS5342678A (en) * 1976-09-30 1978-04-18 Nippon Telegr & Teleph Corp <Ntt> X-ray exposure method
JPS55113330A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai X-ray exposure system and device

Also Published As

Publication number Publication date
JPS5142470B2 (en]) 1976-11-16
DE2333902B2 (de) 1976-02-05
US3742229A (en) 1973-06-26
DE2333902A1 (de) 1974-01-17
FR2191764A5 (en]) 1974-02-01

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